Observation of Dipole-Forbidden Transitions through Fano Antiresonance in Boron-Doped Silicon
- 15 November 1988
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 57 (11) , 4021-4028
- https://doi.org/10.1143/jpsj.57.4021
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Fano resonances in chalcogen-doped siliconPhysical Review B, 1985
- Infrared spectroscopic study of thermal donors in Czochralski-grown silicon developed at 450°CMaterials Letters, 1983
- Resonant interactions of optical phonons with acceptor continuum states in siliconPhysical Review B, 1977
- Temperature Dependence of Raman Scattering in SiliconPhysical Review B, 1970
- Antiresonance in the Optical Absorption Spectra of the Impurity in SolidsJournal of the Physics Society Japan, 1968
- Spectroscopic Investigation of Group-III Acceptor States in SiliconPhysical Review B, 1967
- A study of vibrations of boron and phosphorus in silicon by infra-red absorptionProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1965
- Effects of Configuration Interaction on Intensities and Phase ShiftsPhysical Review B, 1961
- Infrared Absorption of Oxygen in SiliconPhysical Review B, 1957
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956