Fano resonances in chalcogen-doped silicon

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Abstract
Photoexcitation spectra showing structure in the continuum part due to resonant electron-phonon interaction are presented for various centers related to S, Se, and Te in silicon. Theoretical aspects of these Fano resonances are discussed to provide a basis for the interpretation and analysis of results. The analysis allows binding energies to be assigned to several bound states not observable by direct optical excitation. A theoretical model is presented which offers an explanation for the differences between Fano resonances in absorption and photoconductivity spectra. A clear case of oscillating photoconductivity in Si:Te is also presented and interpreted in terms of cascade decay involving optical phonons together with enhanced capture of the slowest conduction electrons at low temperature.