Experimental Correlation between EPD and Electrical Properties in Undoped LEC As-Grown Semi-Insulating GaAs Crystals

This publication has 5 references indexed in Scilit:

• Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by Annealing
  Japanese Journal of Applied Physics, 1984
• The Influence of Dislocation Density on the Uniformity of Electrical Properties of Si Implanted, Semi-Insulating LEC-GaAs
  Japanese Journal of Applied Physics, 1983
• Resistivity, Hall Mobility and Leakage Current Variations in Undoped Semi-Insulating GaAs Crystal Grown by LEC Method
  Japanese Journal of Applied Physics, 1983
• Leakage Current I_L Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAs
  Japanese Journal of Applied Physics, 1982
• Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation Distribution
  Japanese Journal of Applied Physics, 1982