Leakage Current IL Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAs
- 1 September 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (9A) , L542
- https://doi.org/10.1143/jjap.21.l542
Abstract
Leakage current I L equivalent to sheet resistance was measured by the two-point probe method, and was directly correlated with dislocation density variation across (100) wafers of undoped, semi-insulating LEC-grown GaAs. It was found, for the first time, that leakage current I L variation corresponds closely to dislocation density.Keywords
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