Space-charge-limited conduction in Si n+–i–n+ homojunction far-infrared detectors
- 15 April 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (8) , 4418-4425
- https://doi.org/10.1063/1.361750
Abstract
An analytic model is presented to describe the space‐charge‐limited (SCL) conduction in Si homojunction interfacial work‐function internal photoemission far‐infrared detectors. The basic detector unit is a thin n+–i–n+ structure, which is operated at low temperatures and characterized by an interfacial work function at the n+–i interface. The unique aspects of this case lead to simple analytic expressions for all variables of interest. The barrier shape and free‐carrier concentration distribution in the i layer, and their dependence on the applied bias, i layer thickness, and compensating acceptor concentration, are calculated. The SCL current–voltage characteristic is also investigated as a function of i layer parameters. The results obtained are useful for the IR detector design and performance optimization.This publication has 21 references indexed in Scilit:
- Dark current analysis of Si homojunction interfacial work function internal photoemission far-infrared detectorsApplied Physics Letters, 1995
- Homojunction internal photoemission far-infrared detectors: Photoresponse performance analysisJournal of Applied Physics, 1995
- Advanced far-infrared detectorsInfrared Physics & Technology, 1994
- Germanium blocked-impurity-band detector arrays: Unpassivated devices with bulk substratesJournal of Applied Physics, 1993
- Far Infrared Detection with a Si p-i Interface and Multilayer StructuresSuperlattices and Microstructures, 1993
- Far infrared photoelectric thresholds of extrinsic semiconductor photocathodesApplied Physics Letters, 1992
- Interfacial work functions and extrinsic silicon infrared photocathodesApplied Physics Letters, 1989
- Carrier distribution and low-field resistance in short n+-n--n+and n+-p--n+structuresIEEE Transactions on Electron Devices, 1983
- Drift-diffusion theory of symmetrical double-junction diodesSolid-State Electronics, 1982
- Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis in-Type SiliconPhysical Review B, 1973