Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy

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Abstract
Exciton resonance energies in an AlN epilayer on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy were determined as a function of temperature by means of optical reflectance (OR) and cathodoluminescence measurements. The OR spectra exhibited distinct reflectance anomalies at the photon energies just above the multiple internal reflection fringes, and the spectral line shape was fitted considering A (Γ 7v u →Γ 7c ) and BC (Γ 9v ,Γ 7v l →Γ 7c ) exciton transitions. The fitting gave the values of them at 0 K to be 6.211 and 6.266 eV, giving the crystal- field splitting (Δ cr ) of approximately 55 meV. The AlN film exhibited an excitonic emission even at 300 K, which is due to the small Bohr radius of excitons and large longitudinal optical phonon energies. The Einstein characteristic temperature Θ E was estimated to be 580 K.