AlN epitaxial growth on off-angle R-plane sapphire substrates by MOCVD
- 1 July 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 229 (1-4) , 63-68
- https://doi.org/10.1016/s0022-0248(01)01051-x
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Synthesis and Surface Acoustic Wave Properties of AlN Thin Films Fabricated on (001) and (110) Sapphire Substrates Using Chemical Vapor Deposition of AlCl3–NH3 SystemJapanese Journal of Applied Physics, 1997
- Morphology of twinned GaN grown on (11·0) sapphire substratesSolid-State Electronics, 1997
- Experimental Surface Acoustic Wave Properties of AlN Thin Films on Sapphire SubstratesJapanese Journal of Applied Physics, 1997
- Synthesis of AlN Thin Films on Sapphire Substrates by Chemical Vapor Deposition of AlCl3–NH3 System and Surface Acoustic Wave PropertiesJapanese Journal of Applied Physics, 1996
- Transmission Electron Microscopic Observation of AlN/α-Al2O3 Heteroepitaxial Interface with Initial-Nitriding AlN LayerJapanese Journal of Applied Physics, 1995
- Characteristics of AlN Thin Films Deposited by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering and Their Application to GHz-Band Surface Acoustic Wave DevicesJapanese Journal of Applied Physics, 1994
- Epitaxial Growth of AlN Film with an Initial-Nitriding Layer on α-Al2O3 SubstrateJapanese Journal of Applied Physics, 1988
- Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1987
- Zero Temperature Coefficient Surface-Acoustic-Wave Delay Lines on AlN/Al2O3Japanese Journal of Applied Physics, 1982
- High-Frequency and Low-Dispersion Characteristics of Surface Acoustic Waves on AlN/Al2O3Japanese Journal of Applied Physics, 1980