Morphology of twinned GaN grown on (11·0) sapphire substrates
- 1 February 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (2) , 227-229
- https://doi.org/10.1016/s0038-1101(96)00205-5
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Molecular-beam-epitaxy growth of GaN on GaAs(100) by using reactive nitrogen sourceApplied Physics Letters, 1994
- High quality aluminum nitride epitaxial layers grown on sapphire substratesApplied Physics Letters, 1994
- The nature of donor conduction in n-GaNJournal of Applied Physics, 1993
- Schottky barrier photodetector based on Mg-doped p-type GaN filmsApplied Physics Letters, 1993
- Comparison of the physical properties of GaN thin films deposited on (0001) and (011̄2) sapphire substratesApplied Physics Letters, 1993
- Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and propertiesJournal of Applied Physics, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiCJournal of Applied Physics, 1988
- Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxyJournal of Applied Physics, 1987