Molecular-beam-epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source
- 17 January 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (3) , 315-317
- https://doi.org/10.1063/1.111190
Abstract
By using a cold cathode ion gun to ionize the nitrogen gas, the molecular-beam-epitaxy growth of GaN is carried out. The zinc-blende structure GaN epilayer grown on the GaAs(100) substrate with a narrow x-ray diffraction peak width (FWHM) of 23 min and a low carrier concentration of 1017 cm−3 is achieved. The surface optical phonon energies of cubic and hexagonal GaN are experimentally determined to be 82 and 90 meV, respectively.Keywords
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