High quality aluminum nitride epitaxial layers grown on sapphire substrates
- 17 January 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (3) , 339-341
- https://doi.org/10.1063/1.111168
Abstract
In this letter we report the growth of high quality AlN epitaxial layers on sapphire substrates. The AlN grown on (00⋅1) sapphire exhibited a better crystalline quality than that grown on (01⋅2) sapphire. An x‐ray rocking curve of AlN on (00⋅1) Al2O3 yielded a full width at half‐maximum of 97.2 arcsec, which is the narrowest value reported to our knowledge. The AlN peak on (01⋅2) Al2O3 was about 30 times wider. The absorption edge measured by ultraviolet transmission spectroscopy for AlN grown on (00⋅1) Al2O3 was about 197 nm.Keywords
This publication has 9 references indexed in Scilit:
- Comparison of the physical properties of GaN thin films deposited on (0001) and (011̄2) sapphire substratesApplied Physics Letters, 1993
- Low pressure metalorganic chemical vapor deposition of AIN over sapphire substratesApplied Physics Letters, 1992
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Epitaxial growth of A1N film by low-pressure MOCVD in gas-beam-flow reactorJournal of Crystal Growth, 1991
- Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxyJournal of Applied Physics, 1987
- Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometerJournal of Vacuum Science & Technology B, 1983
- Thermal expansion of AlN, sapphire, and siliconJournal of Applied Physics, 1974
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969
- Raman spectra of AℓN, cubic BN and BPSolid State Communications, 1968