Epitaxial growth of A1N film by low-pressure MOCVD in gas-beam-flow reactor
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 643-647
- https://doi.org/10.1016/0022-0248(91)90819-q
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial FilmsIEEE Transactions on Sonics and Ultrasonics, 1985
- Low Temperature Growth of Epitaxial AlN Films on SapphirePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Gas Flow Pattern and Mass Transfer Analysis in a Horizontal Flow Reactor for Chemical Vapor DepositionJournal of the Electrochemical Society, 1972
- A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal ReactorJournal of the Electrochemical Society, 1970