Epitaxial Growth of AlN Film with an Initial-Nitriding Layer on α-Al2O3 Substrate
- 1 February 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (2A) , L161-163
- https://doi.org/10.1143/jjap.27.l161
Abstract
An epitaxial film of AlN with a flat surface and good crystallinity was grown on an α-Al2O3 substrate by a new MOCVD. An initial-nitriding layer of the α-Al2O3 surface was employed as a buffer layer to reduce a lattice mismatch between the AlN film and the α-Al2O3 substrate. The initial-nitriding layer was formed by chemical conversion of the α-Al2O3 surface in NH3 gas at 1200°C.Keywords
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