Low-temperature coefficient bulk acoustic wave composite resonators
- 15 February 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (4) , 308-310
- https://doi.org/10.1063/1.93072
Abstract
This letter reports on an acoustic bulk wave resonator structure having an absolute temperature coefficient of series or parallel resonant frequency of less than 4 ppm/°C over the temperature range −20 to +120 °C comparing favorably with that of conventional AT cut quartz. In addition, the resonant Q was 7600 for parallel and 7300 for series resonance at frequencies near 330 MHz for the fundamental mode. The resonator is composed of a unique composition of an AlN piezoelectric film sputtered on a single-crystal silicon membrane for a total thickness of less than 10 μ. The resonator coupling coefficient was found to be 2.5% corresponding to film coupling of 12%. The AlN films were prepared in a dc planar magnetron reactive sputtering system.Keywords
This publication has 3 references indexed in Scilit:
- Acoustic bulk wave composite resonatorsApplied Physics Letters, 1981
- Low-temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputteringApplied Physics Letters, 1980
- Measurement of Elastic Constants at Low Temperatures by Means of Ultrasonic Waves–Data for Silicon and Germanium Single Crystals, and for Fused SilicaJournal of Applied Physics, 1953