Transmission Electron Microscopic Observation of AlN/α-Al2O3 Heteroepitaxial Interface with Initial-Nitriding AlN Layer
- 1 June 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (6B) , L760
- https://doi.org/10.1143/jjap.34.l760
Abstract
The AlN/α-Al2O3 heteroepitaxial interface is investigated using a transmission electron microscope. The epitaxial AlN film is deposited by metalorganic chemical vapor deposition with and without initial nitriding. The initial nitriding method is to convert the α-Al2O3 substrate surface to a nanometer-thick AlN single-crystal buffer layer in NH3 ambient just before AlN deposition. The (1\bar210)AlN/(1\bar102)α-Al2O3 interface with initial nitriding is found to be atomically flat, and no dislocation inside the postdeposited AlN is observed. We have confirmed that initial nitriding is excellent in improving the crystal quality of the AlN epitaxial layer.Keywords
This publication has 8 references indexed in Scilit:
- A crystallographic model of (00⋅1) aluminum nitride epitaxial thin film growth on (00⋅1) sapphire substrateJournal of Applied Physics, 1994
- Cross-sectional TEM observation of the epitaxial Al/Si(111) interfaceApplied Surface Science, 1992
- Epitaxial growth of A1N film by low-pressure MOCVD in gas-beam-flow reactorJournal of Crystal Growth, 1991
- Atomic resolution study of the structure and interface of aluminum films deposited epitaxially on silicon by ionized cluster beam methodJournal of Vacuum Science & Technology A, 1990
- Transmission Electron Microscopic Study of the Surface and Interface of Carbonized-Layer/Si(100)Japanese Journal of Applied Physics, 1989
- Epitaxial Growth of AlN Film with an Initial-Nitriding Layer on α-Al2O3 SubstrateJapanese Journal of Applied Physics, 1988
- Epitaxial growth of CdTe on GaAs by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1986
- Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial FilmsIEEE Transactions on Sonics and Ultrasonics, 1985