Transmission Electron Microscopic Study of the Surface and Interface of Carbonized-Layer/Si(100)
- 1 February 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (2A) , L293
- https://doi.org/10.1143/jjap.28.l293
Abstract
A heterojunction of carbonized-layer/Si(100) was studied by means of a transmission electron microscope (TEM). The surface layer was clarified to be well aligned to substrate Si(100) by a crosssectional TEM observation. Small misorientation was observed at the bottom of the carbonized layer. Either the surface or the interface of the overlayer had a rough structure with a thickness of a few nm. A plane-view observation revealed the existence of fine grains in the grown layer with a size of \lesssim10 nm, which rotated a little with respect to the substrate Si(100) and each other.Keywords
This publication has 5 references indexed in Scilit:
- A new application of soft X-ray spectroscopy to a non-destructive analysis of a film/substrate contact system: Carbonized-layer (ultra-thin-film)/Si(100)Surface Science, 1988
- Compositional analysis of semiconductor heterojunctions: Structure of SiC (thin buffer layer)/Si(100) systemNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Epitaxial growth and electric characteristics of cubic SiC on siliconJournal of Applied Physics, 1987
- Electron Microscope Observation of Au/Si (111) Interface in Atomic LevelJapanese Journal of Applied Physics, 1986
- Low-Temperature Ti-Silicide Forming Reaction in Very Thin Ti-SiO2/Si(111) Contact SystemsJapanese Journal of Applied Physics, 1985