New integral representations of circuit models and elements for the circuit technique for semiconductor device analysis
- 31 December 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (12) , 1277-1281
- https://doi.org/10.1016/0038-1101(87)90052-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Computer-aided study of steady-state carrier lifetimes under arbitrary injection conditionsSolid-State Electronics, 1979
- Experimental and theoretical studies of I—V characteristics of zinc-doped silicon p-n junctions using the exact DC circuit modelIEEE Transactions on Electron Devices, 1979
- Exact equivalent circuit model for steady-state characterization of semiconductor devices with multiple-energy-level recombination centersIEEE Transactions on Electron Devices, 1979
- Application of the equivalent circuit model for semiconductors to the study of Au-doped p-n junctions under forward biasIEEE Transactions on Electron Devices, 1976
- Small-signal equivalent π networks for carrier generation–recombination–trapping at imperfection centres in semiconductorsElectronics Letters, 1971
- The equivalent circuit model in solid-state electronics—IIISolid-State Electronics, 1970