Effect of Oxygen Ion Energy and Annealing in Formation of Tin Oxide Thin Films

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Abstract
Tin oxide ( SnO x ) thin films were deposited by ion-assisted deposition (IAD) at various ion beam voltages (V I) onto amorphous SiO2/Si substrate at room temperature. Tin oxide thin films with nonstoichiometric/stoichiometric composition were fabricated. The as-deposited SnO x films were mostly amorphous, but they exhibited various degrees of crystallinity and fine grain size after annealing at 500° C for 1 h in air. The annealed film deposited using an ion beam energy (E I) of 300 eV showed a preferred orientation along the SnO2 (110) plane. The preferred orientation changed to SnO2 (002) for film 1000 (the annealed film deposited with E I=1000 eV) through an amorphous intermediate structure of film 500 (the annealed film deposited with E I=500 eV). X-ray photoelectron spectroscopy study showed that the main Sn3d peaks in all samples were similar to the binding energy of Sn4+ and the atomic ratios for all the films were higher than 1.51. For the film grown under an average energy of 123 eV/atom, the refractive index was 2.0 and the estimated porosity was 5.2% smaller than that of the other films.