Electrical and optical characterization of Sb : SnO2
- 1 December 1993
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 8 (12) , 3131-3134
- https://doi.org/10.1557/jmr.1993.3131
Abstract
Films of Sb : SnO2 have been formed by vacuum e-beam evaporation. The structural, electrical, and optical properties of these films have been investigated with respect to annealing time and temperature. After heat treatment in an oxygen atmosphere, thin films with a peak transmittance of 98% and 4–9 × 10−3 Ωcm resistivity have been obtained. The barrier heights and energy band diagrams of Sb : SnO2/Si n-n and p-n heterojunctions have been determined by C-V measurements.Keywords
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