Electrical characteristics of MOSFETs using low-pressure chemical-vapor-deposited oxide
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (7) , 324-327
- https://doi.org/10.1109/55.732
Abstract
The electrical characteristics of MOSFETs and MOS capacitors utilizing thin (80-230 AA) low-pressure chemical-vapor-deposited (LPCVD) oxide films deposited at 12 AA/min are presented. MOSFETs using CVD oxides show good electrical characteristics with 70-90% of the surface mobility of conventional MOSFETs. The CVD oxides exhibit the same low leakage current and high breakdown fields as the thermal oxides, and significantly lower trapping and trap generation rates than thermally grown oxides. Interface state densities of <or=3*10/sup 10/ cm/sup -2/ eV/sup -1/ are obtained from CVD devices by using a short annealing in oxygen ambient following the deposition. These results indicate that these LPCVD oxide films may be promising dielectrics for MOS device application.Keywords
This publication has 9 references indexed in Scilit:
- Electrical characteristics of MOSFET's utilizing Oxygen—Argon sputter-deposited gate Oxide filmsIEEE Transactions on Electron Devices, 1987
- Electrical characteristics of very thin SiO2deposited at low substrate temperaturesIEEE Electron Device Letters, 1987
- Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor depositionJournal of Applied Physics, 1986
- Comparison between CVD and thermal oxide dielectric integrityIEEE Electron Device Letters, 1986
- Hole trapping and breakdown in thin SiO2IEEE Electron Device Letters, 1986
- A Two‐Step Oxidation Process to Improve the Electrical Breakdown Properties of Thin OxidesJournal of the Electrochemical Society, 1985
- Time-dependent-dielectric breakdown of thin thermally grown SiO2filmsIEEE Transactions on Electron Devices, 1985
- Electron trapping in very thin thermal silicon dioxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1980