Precipitation of Dopants in Silicon-Germanium Thermoelectric Alloys
- 1 June 1972
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (6) , 2908-2909
- https://doi.org/10.1063/1.1661622
Abstract
Precipitation of phosphorus and boron dopants has been observed in a silicon‐germanium alloy thermoelectric couple. The couple was life tested in a thermal gradient of 1050 to 370 °C for 39 210 h. Electrical resistivity, Seebeck coefficient, and the derived carrier concentration are reported as a function of temperature.This publication has 5 references indexed in Scilit:
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