Successful liquid phase epitaxial growth and optically pumped laser operation of In0.5Ga0.5P–Ga0.4Al0.6As double-heterostructure material
- 15 August 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (4) , 216-218
- https://doi.org/10.1063/1.1655445
Abstract
The preparation by liquid phase epitaxy of laser‐quality Aly Ga1−y As/In0.49Ga0.51P/Aly Ga1−y As double‐heterostructure material is reported. The structure provided optical waveguiding and carrier confinement for Cleaved bars have shown laser action at ∼6200 Å, when optically pumped in the temperature range 77–130 K. The lasing threshold is 50% higher than for geometrically similar high‐quality Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As laser material.
Keywords
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