Effects of Oxygen Doping on the Electrical and Optical Properties of Sputtered ZnS:TbOF Electroluminescent Thin Films
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12A) , L2239
- https://doi.org/10.1143/jjap.28.l2239
Abstract
The electrical and luminescent properties of green-color ZnS:TbOF thin-film electroluminescent devices have been investigated. It is shown that appropriate oxygen doping is an important factor in the improvement of the luminance. The high luminance achieved by oxygen doping is due not only to the efficiency improvement based on the formation of TbOF complex center but also to the increased amount of transported charges flowing through the active layers.Keywords
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