3D simulations of ion implantation processes
- 1 December 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 43 (1-4) , 106-110
- https://doi.org/10.1016/0169-4332(89)90198-0
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Lupin-3D: A three-dimensional calculation of damage energy distribution and cascade parameters for ion-implanted materialsMaterials Science and Engineering: B, 1989
- A spatial damage energy distribution calculation for ion-implanted materialsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Cross-sectional high-resolution electron microscopy investigation of argon-ion implantation-induced amorphization of siliconJournal of Applied Physics, 1988
- A direct and fast computing method for damage energy depth distribution in ion implanted materialsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Theoretical predictions of the lateral spreading of implanted ionsJournal of Physics C: Solid State Physics, 1986
- Ion implantation of Si by 12C, 29Si, and 120Sn: Amorphization and annealing effectsJournal of Applied Physics, 1985
- Refined universal potentials in atomic collisionsNuclear Instruments and Methods in Physics Research, 1982
- Calculation of projected ranges — analytical solutions and a simple general algorithmNuclear Instruments and Methods, 1981
- Recoil contribution to ion-implantation energy-deposition distributionsJournal of Applied Physics, 1975
- Range Distribution Theory Based on Energy Distribution of Implanted IonsJournal of Applied Physics, 1972