A direct and fast computing method for damage energy depth distribution in ion implanted materials
- 1 September 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 28 (2) , 229-236
- https://doi.org/10.1016/0168-583x(87)90109-1
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Simple Monte-Carlo computer procedure for the sputtering and depth parameter determination of implanted ions in amorphous targetsSurface Science, 1985
- Atomic structure of ion implantation damage and process of amorphization in semiconductorsJournal of Vacuum Science & Technology A, 1984
- Displacement criterion for amorphization of silicon during ion implantationJournal of Applied Physics, 1981
- Recoil contribution to ion-implantation energy-deposition distributionsJournal of Applied Physics, 1975
- Computer simulation of atomic-displacement cascades in solids in the binary-collision approximationPhysical Review B, 1974
- Depth distribution of energy deposition by ion bombardmentComputer Physics Communications, 1974
- Heavy-ion range profiles and associated damage distributionsRadiation Effects, 1972
- Energy deposition and penetration depth of heavy ions in the electronic stopping regionRadiation Effects, 1971
- Simulation of high fluence fast neutron damage with heavy ion bombardmentRadiation Effects, 1971
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969