Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells
- 1 April 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (4A) , L363
- https://doi.org/10.1143/jjap.38.l363
Abstract
The effect of the built-in field caused by the piezoelectric effect and the spontaneous polarization inherent in nitride quantum wells on the intersubband transition (ISBT) is studied. Measured intersubband absorption wavelengths of Al0.65Ga0.35N/GaN multiquantum wells suggest the existence of a strong field of about 2 MV/cm. For thick wells, the built-in field in the well reduces the effective well width, which drastically shortens the ISBT wavelength and increases the intersubband relaxation time. For thin wells, the strong field in barriers reduces the effective barrier height, which affects the formation of the second subband. Reduction in the field strength in the barriers is important in achieving a short wavelength ISBT.Keywords
This publication has 10 references indexed in Scilit:
- Stability and band offsets of AlN/GaN heterostructures: impact on device performanceSemiconductor Science and Technology, 1998
- Electron Scattering Rates in AlGaN/GaN Quantum Wells for 1.55-µm Inter-Subband TransitionJapanese Journal of Applied Physics, 1998
- Spontaneous polarization and piezoelectric constants of III-V nitridesPhysical Review B, 1997
- Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µm Intersubband Transition in AlGaN/GaN Quantum WellsJapanese Journal of Applied Physics, 1997
- Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlatticesJournal of Applied Physics, 1997
- Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InNPhysical Review B, 1996
- Elastic constants of gallium nitrideJournal of Applied Physics, 1996
- Electron-phonon scattering in As quantum-well structures in an electric fieldPhysical Review B, 1994
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial FilmsIEEE Transactions on Sonics and Ultrasonics, 1985