Neutron SEU trends in avionics [memory chips]
- 23 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Accelerator (proton and neutron) measurements of 44 memory device vintages, along with 13 years of avionics processor experience, indicate that Dynamic Random Access Memories (DRAMs), rather than Static Random Access Memories (SRAMs), may become the future memory of choice for protection against atmospheric neutron single event upset Author(s) Kerness, N. Lockheed Martin Federal Syst., Owego, NY, USA Taber, A.Keywords
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