Magnetoresistance of Magnetic Tunnel Junctions in the Presence of a Nonmagnetic Layer
- 21 December 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 81 (25) , 5660-5663
- https://doi.org/10.1103/physrevlett.81.5660
Abstract
We find that electron propagation across a uniform nonmagnetic metallic layer in a magnetically layered structure is coherent up to a critical length . This provides a possible explanation for the slow decay of the magnetoresistance of magnetic tunnel junctions when a layer of Cu or Ag is inserted between the magnetic electrode and the barrier. However, for many (most) structures the roughness of the interfaces breaks the coherence for . While the loss of coherence is not fatal for the magnetoresistance of metallic multilayers, it is for tunnel junctions. The quantum well states arising from the insertion of a nonmagnetic layer in a magnetic tunnel junction do not promote magnetoresistance.
Keywords
This publication has 7 references indexed in Scilit:
- Resonance in tunneling through magnetic valve tunnel junctionsEurophysics Letters, 1997
- Ferromagnetic–insulator–ferromagnetic tunneling: Spin-dependent tunneling and large magnetoresistance in trilayer junctions (invited)Journal of Applied Physics, 1996
- Electronic Transport in Mesoscopic SystemsPublished by Cambridge University Press (CUP) ,1995
- Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel JunctionsPhysical Review Letters, 1995
- Spin-polarized electron tunnelingPhysics Reports, 1994
- Electron transmission through silicon stacking faultsPhysical Review B, 1990
- Conductance and exchange coupling of two ferromagnets separated by a tunneling barrierPhysical Review B, 1989