A MODEL FOR COUPLED DOPANT DIFFUSION IN SILICON
- 1 January 1987
- journal article
- Published by Emerald Publishing in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
- Vol. 6 (1) , 59-63
- https://doi.org/10.1108/eb010302
Abstract
The simulation of coupled dopant diffusion in silicon is becoming increasingly important in integrated circuit technology, as device dimensions are reduced and efforts are made to reduce process complexity. Thus a need exists for accurate simulation over a wide range of diffusion conditions, based on necessity on well tested, predictive physical models.Keywords
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