Oxidation-enhanced diffusion of ion-implanted boron in heavily phosphorus-doped silicon
- 15 July 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (2) , 711-715
- https://doi.org/10.1063/1.336311
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
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