Effect of oxidation on orientation-dependent boron diffusion in silicon
- 1 June 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (6) , 709-717
- https://doi.org/10.1016/0038-1101(73)90114-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- The Orientation Dependence of Boron DiffusionJapanese Journal of Applied Physics, 1970
- Diffusion of boron, phosphorus, arsenic, and antimony intoProceedings of the IEEE, 1970
- The orientation dependent diffusion of boron in silicon under oxidizing conditionsSolid-State Electronics, 1969
- The influence of crystal orientation on silicon semiconductor processingProceedings of the IEEE, 1969
- New Method for Treating Lattice Point Defects in Covalent CrystalsPhysical Review B, 1965
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962