Temperature dependence of boron diffusion in (111), (110) and (100) silicon
- 30 June 1976
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (6) , 545-546
- https://doi.org/10.1016/0038-1101(76)90020-4
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Anisotropic boron diffusion in silicon under oxidizing atmospheresSolid State Communications, 1973
- Effect of oxidation on orientation-dependent boron diffusion in siliconSolid-State Electronics, 1973
- Boron redistribution at the oxide–silicon interface during drive-in in oxidising atmospheresElectronics Letters, 1973
- Orientation dependence of the diffusion of boron in siliconSolid-State Electronics, 1971
- The orientation dependent diffusion of boron in silicon under oxidizing conditionsSolid-State Electronics, 1969
- Redistribution of Diffused Boron in Silicon by Thermal OxidationJapanese Journal of Applied Physics, 1964