Anisotropic boron diffusion in silicon under oxidizing atmospheres
- 15 June 1973
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 12 (12) , 1299-1302
- https://doi.org/10.1016/0038-1098(73)90869-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Orientation dependence of the diffusion of boron in siliconSolid-State Electronics, 1971
- The Orientation Dependence of Boron DiffusionJapanese Journal of Applied Physics, 1970
- The orientation dependent diffusion of boron in silicon under oxidizing conditionsSolid-State Electronics, 1969
- The base diffusion profile arising from boron redistribution in the oxide—a useful approximationSolid-State Electronics, 1965
- Redistribution of Diffused Boron in Silicon by Thermal OxidationJapanese Journal of Applied Physics, 1964