The base diffusion profile arising from boron redistribution in the oxide—a useful approximation
- 1 December 1965
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 8 (12) , 991-993
- https://doi.org/10.1016/0038-1101(65)90165-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Redistribution of Solutes During Thermal Oxidation of SiliconJournal of Applied Physics, 1964
- Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of SiliconJournal of Applied Physics, 1964
- Redistribution of Diffused Boron in Silicon by Thermal OxidationJapanese Journal of Applied Physics, 1964
- Impurity Redistribution and Junction Formation in Silicon by Thermal OxidationBell System Technical Journal, 1960