Redistribution of Solutes During Thermal Oxidation of Silicon

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Abstract
During thermal oxidation of silicon, the solute in the original silicon is redistributed between the oxide formed and the unoxidized silicon. The redistribution depends on the segregation coefficient of the solute between the oxide and the silicon, the growth rate constant of the oxide, and the diffusion coefficients of the solute in the oxide and in the silicon. It also depends on the boundary condition existing at the oxide-free space interface. The concentration profile of the redistributed solute is analyzed mathematically and exact solutions are obtained for two cases. In the first case, there is no gain or loss of the solute by the oxide-silicon system through the oxide surface. In the second case, the oxide is in equilibrium with the ambient gas so that the concentration of the solute is a constant at the oxide surface. The results are discussed with special attention to the two most common solutes, boron and phosphorus.

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