Terrace-width-induced domain transition on vicinal Si(100) studied with microprobe diffraction
- 1 July 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 67 (1) , 101-104
- https://doi.org/10.1103/physrevlett.67.101
Abstract
We have used microprobe RHEED and a convex curved substrate to study the terrace-width dependence of equilibrium surface structures on vicinal Si(001). We observe a transition from double to single domains of the 2×1 reconstruction in periodic [110] step arrays that occurs gradually over a range of miscut angle from 0° to 5°, and is independent of temperature over the measured range of 500–800 °C. Possible mechanisms for this transition and its relation to a transition in step heights are described.Keywords
This publication has 23 references indexed in Scilit:
- Scanning-tunneling-microscopy study of single-domain Si(001) surfaces grown by molecular-beam epitaxyPhysical Review Letters, 1989
- Spontaneous growth of coherent tilted superlattice on vicinal (100) GaAs substratesApplied Physics Letters, 1989
- Stabilities of single-layer and bilayer steps on Si(001) surfacesPhysical Review Letters, 1987
- Crystalline intermediate phases in the formation of epitaxial NiSi2 on Si(111)Journal of Vacuum Science & Technology A, 1987
- Atomic steps on Si(100) surfacesJournal of Vacuum Science & Technology A, 1987
- Biatomic Layer-High Steps on Si(001)2×1 SurfaceJapanese Journal of Applied Physics, 1987
- Polar-on-nonpolar epitaxyJournal of Crystal Growth, 1987
- Summary Abstract: Diffraction from stepped surfacesJournal of Vacuum Science & Technology A, 1984
- Statistical mechanics of equilibrium crystal shapes: Interfacial phase diagrams and phase transitionsPhysics Reports, 1984
- LEED-investigation of step arrays on cleaved germanium (111) surfacesSurface Science, 1970