GaAs and InP Nanohole Arrays Fabricated by Reactive Beam Etching Using Highly Ordered Alumina Membranes
- 1 February 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (2S)
- https://doi.org/10.1143/jjap.38.1052
Abstract
Highly ordered anodic porous alumina was used as a mask for a reactive beam etching (RBE) to transform the nanochannel pattern into III-V semiconductors. The alumina mask showed high tolerance to RBE using a Br2/N2 mixed gas system. GaAs and InP nanohole arrays with a high aspect ratio and with diameter uniformity of 2%, which was as good as that of the alumina mask, were obtained.Keywords
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