Nanofabrication of GaInAsP/InP 2-dimensional photonic crystals by a methane-based reactive ion beam etching
- 1 September 1996
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 227 (1-4) , 415-418
- https://doi.org/10.1016/0921-4526(96)00457-7
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
- Support Center for Advanced Telecommunications Technology Research Foundation
This publication has 11 references indexed in Scilit:
- Fabrication and Photoluminescence Studies of GaInAsP/InP 2-Dimensional Photonic CrystalsJapanese Journal of Applied Physics, 1996
- Polarisation changes in spontaneous emission fromGaInAsP/InP two-dimensional photonic crystalsElectronics Letters, 1995
- Theoretical Calculation of Photonic Gap in Semiconductor 2-Dimensional Photonic Crystals with Various Shapes of Optical AtomsJapanese Journal of Applied Physics, 1995
- Possibility of InP-Based 2-Dimensional Photonic Crystal: An Approach by the Anodization MethodJapanese Journal of Applied Physics, 1995
- Fabrication of 2-D photonic bandgap structures inGaAs/AlGaAsElectronics Letters, 1994
- Reactive Ion Beam Etching of Indium Phosphide in Electron Cyclotron Resonance Plasma Using Methane/Hydrogen/Nitrogen MixturesJapanese Journal of Applied Physics, 1994
- Existence of a photonic band gap in two dimensionsApplied Physics Letters, 1992
- Reactive Ion Beam Etch of GaInAsP/InP Multilayer and Removal of Damaged Layer by Two-Step EtchJapanese Journal of Applied Physics, 1991
- Comparison of CH4/H2/Ar reactive ion etching and electron cyclotron resonance plasma etching of In-based III–V alloysJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Inhibited Spontaneous Emission in Solid-State Physics and ElectronicsPhysical Review Letters, 1987