Polarisation changes in spontaneous emission fromGaInAsP/InP two-dimensional photonic crystals
- 28 September 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (20) , 1776-1778
- https://doi.org/10.1049/el:19951182
Abstract
GaInAsP/Inp strained quantum-well two-dimensional photonic crystals have been fabricated. The polarisation of photoluminescence radiating parallel to the substrate plane was changed from TE to TM when the photonic bandgap for TE-polarisation was designed to overlap with the emission energy. This is considered to be caused by the quantum confinement for photons and electrons.Keywords
This publication has 6 references indexed in Scilit:
- Possibility of InP-Based 2-Dimensional Photonic Crystal: An Approach by the Anodization MethodJapanese Journal of Applied Physics, 1995
- Fabrication of 2-D photonic bandgap structures inGaAs/AlGaAsElectronics Letters, 1994
- Optical properties of two-dimensional photonic lattices fabricated as honeycomb nanostructures in compound semiconductorsApplied Physics Letters, 1994
- Band-structure engineering in strained semiconductor lasersIEEE Journal of Quantum Electronics, 1994
- Existence of a photonic band gap in two dimensionsApplied Physics Letters, 1992
- Inhibited Spontaneous Emission in Solid-State Physics and ElectronicsPhysical Review Letters, 1987