Modeling and Test Verification for Hardened Integrated Circuits
- 1 January 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 26 (6) , 4763-4768
- https://doi.org/10.1109/tns.1979.4330224
Abstract
Hardened dielectrically isolated integrated circuits are being developed to provide an order of magnitude improvement in radiation response over previous bipolar technology. This paper describes (a) the analytical and experimental techniques used to develop the hardened parts, and (b) comparative analytical and test results obtained thus far in the program. The paper describes how (a) various "element" models were defined for CAD usage, (b) how design tolerances were established for the element models, (c) how circuit design margins were established, (d) experimental techniques and equipment used to validate early designs, and (e) comparative analytical and test results.Keywords
This publication has 7 references indexed in Scilit:
- The Current Limiting Capability of Diffused ResistorsIEEE Transactions on Nuclear Science, 1979
- Conductivity Modulation Effects in Diffused Resistors at Very High Dose Rate LevelsIEEE Transactions on Nuclear Science, 1979
- Charge transport studies in SiO2: Processing effects and implications for radiation hardeningIEEE Transactions on Nuclear Science, 1974
- The effects of ionizing radiation on diffused resistorsIEEE Transactions on Nuclear Science, 1974
- Statistical Modeling of Semiconductor Devices for the Tree EnvironmentIEEE Transactions on Nuclear Science, 1968
- Radiation Effects on MicrocircuitsIEEE Transactions on Nuclear Science, 1966
- Displacement Damage in Silicon and Germanium TransistorsIEEE Transactions on Nuclear Science, 1965