Numerical analysis of transient photoconductivity in insulators
- 1 November 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (11) , 7414-7424
- https://doi.org/10.1063/1.330111
Abstract
The nonlinear partial differential equations which describe transient photoconductivity in insulators are solved numerically. Trapping and recombination are included which allows photoconduction to be studied in the presence of large space charge. Use of methods for ‘‘stiff’’ differential equations insures stable time dependent solutions even for problems which have widely different time constants. The program is applied to a thin film (1000 Å) of silicon dioxide to illustrate the salient features of the numerical solutions and the capabilities of the program.This publication has 13 references indexed in Scilit:
- Direct observation of the gate Oxide electric field distribution in Silicon MOSFET'sIEEE Electron Device Letters, 1982
- Computation of photoconductivity in insulators in the space charge and recombination regime: Application to PbO filmsJournal of Applied Physics, 1981
- Time-dependent radiation-induced conductivity in electron-irradiated Teflon foilsJournal of Applied Physics, 1980
- Dynamic model for e-beam irradiation of MOS capacitorsJournal of Applied Physics, 1979
- Numerical analysis of electrical response: Statics and dynamics of space-charge regions at blocking electrodesJournal of Applied Physics, 1979
- Effects of ionizing radiation on ion-bombarded MNOSIEEE Transactions on Electron Devices, 1978
- Determination of Spatial Distribution of Charges in Thin DielectricsPhysical Review Letters, 1977
- Photocurrents and photoconductive yield in MOS structures during x irradiationJournal of Applied Physics, 1975
- Mechanisms of Charge Buildup in MOS InsulatorsIEEE Transactions on Nuclear Science, 1975
- Double Extraction of Uniformly Generated Electron-Hole Pairs from Insulators with Noninjecting ContactsJournal of Applied Physics, 1971