Ionization enhanced annealing in P and As implanted Si layers
- 1 January 1976
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 30 (2) , 125-126
- https://doi.org/10.1080/00337577608233528
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Ionization enhanced diffusionThe Journal of Chemical Physics, 1973
- Studies of Radiation Damage in Degenerate Silicon Irradiated at Low TemperaturesPhysical Review B, 1969
- Injection-Stimulated Vacancy Reordering in p-Type Silicon at 76°KJournal of Applied Physics, 1965