Electron capture coefficient of neutral indium in silicon
- 1 October 1975
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 17 (7) , 787-790
- https://doi.org/10.1016/0038-1098(75)90721-8
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The photon-ionization cross-section of indium acceptors in siliconSolid State Communications, 1971
- On the Problem of Electron Capture Coefficients of the Group III Acceptors in SiliconPhysica Status Solidi (b), 1969
- Radiative Capture by Impurities in SemiconductorsPhysical Review B, 1967
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967
- On the photoionization of deep impurity centers in semiconductorsSolid State Communications, 1965
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958