High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current
- 31 January 2005
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 49 (1) , 117-122
- https://doi.org/10.1016/j.sse.2004.07.009
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivityApplied Physics Letters, 2002
- Improved solar-blind external quantum efficiency of back-illuminated Al
x
Ga
1−
x
N heterojunction pin photodiodesElectronics Letters, 2002
- Improved solar-blind detectivity using an AlxGa1−xN heterojunction p–i–n photodiodeApplied Physics Letters, 2002
- GaN-based modulation doped FETs and UV detectorsPublished by Elsevier ,2001
- High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor DepositionPhysica Status Solidi (a), 2001
- Low-noise photodetectors based on heterojunctions of AlGaN–GaNApplied Physics Letters, 2001
- Solar-blind Al
x
Ga
1-
x
N-basedmetal-semiconductor-metalultraviolet photodetectorsElectronics Letters, 2000
- High responsitivity intrinsic photoconductors based on AlxGa1−xNApplied Physics Letters, 1996
- Semiconductor ultraviolet detectorsJournal of Applied Physics, 1996
- AlGaN ultraviolet photoconductors grown on sapphireApplied Physics Letters, 1996