Variable Angle of Incidence Spectroscopic Ellipsometric Measurement of the Franz-Keloysh Effect in Modfet Structures
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Variable angle of incidence spectroscopic ellipsometry: Application to GaAs-AlxGa1−xAs multiple heterostructuresJournal of Applied Physics, 1986
- Variable Angle of Incidence Spectroscopic Ellipsometric Study of Semiconductor Multilayer StructuresMRS Proceedings, 1986
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctionsApplied Physics Letters, 1985