Temperature Dependence of Reverse Current in Be Ion Implanted InSb p+n Junctions
- 1 February 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (2A) , L76
- https://doi.org/10.1143/jjap.24.l76
Abstract
Temperature dependence of the reverse current in Be ion implanted InSb p+n junctions is studied. Results indicate that the generation-recombination is a dominant mechanism for the reverse current in metallurgical junctions. A combination of tunneling and thermal excitation via surface states is proposed as a surface conduction mechanism in field induced junctions.Keywords
This publication has 1 reference indexed in Scilit:
- Effects of Insulated Gate on Ion Implanted InSb p+n JunctionsJapanese Journal of Applied Physics, 1984