Effects of Insulated Gate on Ion Implanted InSb p+n Junctions
- 1 March 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (3A) , L162
- https://doi.org/10.1143/jjap.23.l162
Abstract
Current-voltage characteristics for Be ion implanted InSb p+n junctions with insulated gate fabricated by planar technology are studied. It has been demonstrated by field effects of the insulated gate that a large current can be originated from the surface of the p+ region. Results also suggest that the insulated gate is a good way to improve properties of the p+n junction and a low dose of 4.1×1012 cm-2 at 90 keV is enough for preparation of a good p+n junction.Keywords
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