Formation of Very Thin Anodic Oxide of InSb
- 1 August 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (8A) , L525-527
- https://doi.org/10.1143/jjap.22.l525
Abstract
An anodic oxide of InSb has been formed under a constant voltage to control thickness. It is found that the anodic oxide can be voltage-controlled up to 350 Å with a very good optical flatness and up to 500 Å if a small roughness is allowed. The surface roughness of the oxide increases drastically with increasing thickness. The transport number of oxygen ions in the oxide during anodization may be assumed to be 1 at least up to 750 Å.Keywords
This publication has 12 references indexed in Scilit:
- Influence of the semiconductor-oxide interlayer on the AC-behaviour of InSb MOS-capacitorsApplied Physics B Laser and Optics, 1978
- Method of separating hysteresis effects from MIS capacitance measurementsApplied Physics Letters, 1977
- Electrical conduction through thermal and anodic oxides of InSbJournal of Vacuum Science and Technology, 1975
- New Photovoltaic Response in the Surface of n-Type InSbJournal of Applied Physics, 1970
- Effects of Light on the Charge State of InSb–MOS DevicesJournal of Applied Physics, 1969
- Formation and Properties of Anodic Oxide Films on Indium AntimonideJapanese Journal of Applied Physics, 1968
- IMAGING AND STORAGE WITH A UNIFORM MOS STRUCTUREApplied Physics Letters, 1967
- InSb MOS INFRARED DETECTORApplied Physics Letters, 1967
- Anodization of InSbJournal of the Electrochemical Society, 1960
- The Kinetics and Mechanism of Formation of Anode Films on Single-Crystal InSbJournal of the Electrochemical Society, 1957