New Photovoltaic Response in the Surface of n-Type InSb

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Abstract
Previous studies of anodized InSb samples cooled in the dark to 77°K have shown that initially n‐type surfaces are changed to p type upon visible illumination. For n‐type bulk material an infrared photovoltaic response can be obtained from the inverted surface after such illumination. A new response has been found in n‐type samples which was present initially but which then disappeared upon visible illumination. Measurements on both types of response have shown other distinguishing features, and several models are discussed.