Dual implantation of C and Ga ions into GaAs
- 1 May 1978
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (5) , 2988-2990
- https://doi.org/10.1063/1.325146
Abstract
Dual implants of C+ and Ga+ ions in GaAs have been investigated by sheet‐resistivity and Hall‐effect measurements. Efficient doping has been achieved by dual implantation, even at an annealing temperature of 700 °C. Analysis of electrical profiles indicates that the concentration of substitutional atoms in As sites is less than the implanted dose; the remaining C atoms are believed to out‐diffuse through encapsulation during annealing. Although the doping efficiency for the dual implants is higher than that of the single implants, the effective compensation ratio is about the same, which suggests that ’’self‐compensation’’ may be the predominant mechanism in the implanted samples.This publication has 9 references indexed in Scilit:
- Carbon-ion-implanted gallium arsenideApplied Physics Letters, 1976
- Hall-effect measurements in Cd-implanted GaAsJournal of Applied Physics, 1976
- Enhancement of the donor activity of implanted selenium in GaAs by gallium implantationApplied Physics Letters, 1976
- Self-compensation of donors in high-purity GaAsApplied Physics Letters, 1975
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Effect of dual implants into GaAsElectronics Letters, 1975
- The effects of degeneracy on doping efficiency for n−type implants in GaAsApplied Physics Letters, 1975
- Ion implantation in compound semiconductors–an approach based on solid state theoryRadiation Effects, 1973
- Properties of ion implanted silicon, sulfur, and carbon in gallium arsenideRadiation Effects, 1970