1.48 mu m high-power GaInAsP-InP graded-index separate-confinement-heterostructure multiple-quantum-well laser diodes
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (6) , 1924-1931
- https://doi.org/10.1109/3.234453
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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